The penetration of 18O tracer into single layered and duplex NiO scales formed on Ni has been examined by sputter depth profiling and imaging modes of secondary ion mass spectrometry (SIMS). Preoxidation annealing in hydrogen and superficial contamination during substrate surface preparation were found to promote inward scale growth. The principles for selecting SIMS techniques for studying oxide scales and the influence of substrate condition on mechanisms for gaseous oxygen transport in NiO are discussed.
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