Experimental study of compensation for the effect of temperature on a silicon micromachined gyroscope

The drift rate temperature sensitivity D_t of a silicon micromachined gyroscope can be greatly reduced by compensation, so that the gyroscope can achieve high performance over a wide temperature range. A new experimental process for establishing the temperature—voltage model of the gyroscope used in compensation is introduced. First, a temperature sensor is placed inside the silicon micromachined gyroscope and the gyroscope is placed in a temperature-controlled chamber. Second, the ambient temperature of the gyroscope is changed by adjusting the temperature in the chamber, and the temperature inside the gyroscope and the gyroscope output voltage are acquired simultaneously. Finally, the temperature—voltage model of the gyroscope used in compensation can be established by the data obtained. By the above experimental process, the experiment time may be greatly shortened. A temperature-sensing system for implementing the given experiment for a silicon micromachined gyroscope is established, and a compensation model is developed on the basis of the numerous experimental data acquired during this process. Through compensation, the gyroscope sensitivity D_t is reduced from 229.1°/h per°C (before compensation) to 35.7°/h per°C (after compensation), that is, by 84.4 per cent, and the turn-on time of the gyroscope is reduced, with improved bias stability.